Index

A

Aluminum wire failures
Anaglyph stereo pair presentation
Ancient impact zircons
Angular distribution, backscattered electrons
Auger electron emission
Auger electron spectroscopy
Avogadro’s number

B

Backscattered electrons (BSEs)
angular distribution
atomic number contrast
energy distribution
η vs. atomic number, Z
η vs. surface tilt, θ
numerical measure
origin
spatial distribution
topographic contrast—number effects
Beam convergence angle, α
Beam current
Beam current density
Beam diameter
Beam energy. Low beam energy SEM; Low beam energy X-ray microanalysis
compositional contrast with backscattered electrons
high resolution SEM imaging
vs. secondary electrons (SE) yield
topographic contrast
with backscattered electrons
with secondary electrons
Beam placement
Beam solid angle
Bethe expression
Brightness equation
BSEs
SeeBackscattered electrons (BSEs)
Bulk biological and organic specimens
Bulk specimens
origins of geometric effects
particle analysis
optimum spectra
quantitative analysis of particles
uncertainty in
X-ray measurements
X-ray spectrum imaging (XSI)
with rough surfaces

C

Carbonado diamond
CASINO simulation
Cathodoluminescence (CL)
applications of
geology
materials science
organic compounds
collection of
detection of
measurement
origin
Compositional mapping
limitations of
MAXIMUM PIXEL spectrum
quantitative compositional mapping
SUM spectrum
total intensity region-of-interest mapping
X-ray spectrum imaging (XSI)
EDS dead-time
elemental mapping data collection
flash mapping
high count mapping
pixel density
pixel dwell time
Concentration limit of detection ( C DL )
reference value
trace or minor constituent
Continuous energy loss approximation

D

A Database of Electron-Solid Interactions (Joy)
Detective quantum efficiency (DQE)
DTSA-II EDS software
design
fundamental concepts
GUI
Monte Carlo simulation
motivation
optional tables
overview
platform
simulation
three-leg stool
experiment design
quantification
simulation

E

EDS
SeeEnergy dispersive X-ray spectrometry (EDS)
Electron backscattering diffraction (EBSD)
align sample
check for EBSD patterns
checklist
acquisition parameters
candidate crystallographic phases
EBSD detector
microscope operating conditions
orientation map
pattern optimization
specimen considerations
index patterns
map parameters
measurements
origin of
pattern detection
sample preparation for
spatial resolution
Electron beam, interaction volume change
elastic scattering
elastic scattering cross section
inelastic scattering
Monte Carlo calculations
beam electron interaction volume
composition
electron interaction volume
electron trajectory simulation
incident beam energy
Monte Carlo simulation (CASINO simulation)
size of the interaction volume
specimen tilt
specimen atoms
Electron-excited X-ray microanalysis, geometric effects
Electron interaction volume
Electron optical brightness, β
Electron optical parameters
astigmatism
beam convergence angle, α
beam current
beam current density
beam diameter
beam energy
beam solid angle
electron optical brightness, β
focus
Electron probe microanalyzers (EPMAs)
Electron–solid interactions, database of
Energy dispersive X-ray microanalysis checklist
analytical procedure
calibrating the EDS detector
detector position
energy calibration
probe current
pulse process time constant
quality control
sample orientation
working distance/specimen-to-EDS distance
collecting data
collecting peak-fitting references
collecting spectra from unknown
collecting standards
experiment optimization
exploratory spectrum
reference spectra
selecting standards
data analysis
instrumentation
conductive coater
EDS detector
SEM
peak reference materials
quality check
quantification
results
sample preparation
standard materials
Energy dispersive X-ray spectrometry (EDS)
adequate counts
beam current
beam energy
coincidence peaks
detection process
coincidence peaks
peak broadening
Si absorption edge
Si-escape peak
Si internal fluorescence peak
detector dead-time
detector time constant
electron-excited EDS operation
beam current
channel width and number
EDS time constant
solid angle
exciting characteristic X-rays
fluorescence yield
lower photon energy region
manual peak identification
manual qualitative analysis
minor and trace constituents
parameters
calibration
solid angle
spectrum channel energy width
spectrum energy span
time constant
pathological electron scattering
trace analysis artifacts
peaks, identifying
principles, qualitative EDS analysis
QC project
QC tools within DTSA-II
quality assurance issues
quality measurement environment
detector geometry
detector orientation
energy calibration linearity
optimal working distance
process time
Si escape peak
silicon drift detector (SDD)
low X-ray flux
moderate resolution
output count rate with live-time dose
resolution and peak position stability
software tools
trace level measurement
X-ray absorption
X-ray energy database
Energy distribution, backscattered electrons
EPMAs
SeeElectron probe microanalyzers (EPMAs)
Everhart–Thornley detector

F

Fiji
Focused ion beams (FIB)
cross-section preparation
focused ion beam systems
imaging with ions
ion–solid interactions
SEM, sample preparation
3D techniques and imaging

G

Geometric factors
bulk specimens
electron-excited X-ray microanalysis
useful indicators of
EDS spectrum
raw analytical total
rough bulk samples
Graphical user interface (GUI)

H

Hard-facing alloy bearing surface
Helium ion microscope (HIM)
High resolution imaging
achieving visibility
beam footprint
delocalized signals
instrumentation considerations
pathological specimen and instrumentation behavior
contamination
instabilities
pathological specimen behavior
pixel size
secondary electron contrast
beam range
bright edge effect
critical dimension metrology
isolated edges
with secondary electrons
beam energy strategies
low loss BSEs
SE 1 signal
SEM
HIM
SeeHelium ion microscope (HIM)

I

Image defects
charging
control charging artifacts
define
in SEM images
contamination
image defocusing (blurring)
Moiré effects
projection distortion (foreshortening)
radiation damage
Image formation
calibrating the image
image defects
image defocusing (blurring)
projection distortion (foreshortening)
image dimensions
ImageJ-Fiji, calibrated structure in
ImageJ-Fiji, routine linear measurements with
magnification
scale bars
by scanning action
stereomicroscopy
qualitative stereomicroscopy
quantitative stereomicroscopy
surface measurement
ImageJ-Fiji
calibrated structure in
routine linear measurements with
ImageJ universe
Imaging crystalline materials
acquired data
application
cleaning EBSD data
electron channeling contrast
electron backscattering diffraction (EBSD)
instrument conditions
specimen preparation
map components
polycrystalline materials
single crystals
transmission Kikuchi diffraction (TKD)
Incident beam energy
Ink-Jet printer deposits
International Union of Pure and Applied Chemistry (IUPAC)
Ion beam microscopy
chemical microanalysis
generating ion beams
helium ion microscope (HIM)
current generation and data collection
operating the
patterning with
signal generation in
patterning with ion
usefulness

J

Java Runtime Environment (JRE)

K

Kanaya–Okayama range
k-ratio
analytical total
converting sets of
define
element by difference
estimate C Z
matrix corrections
matrix effects, physical origin of
normalization
oxygen by assumed stoichiometry
quantitative electron-excited X-ray microanalysis
standardless analysis
standards-based k-ratio protocol
reporting composition
atomic fraction
mass fraction
oxide fractions
stoichiometry
sets of
uncertainties in
waters of crystallization
ZAF factors, microanalysis
k-ratio/matrix correction protocol
alkali element migration
Ba-Ti interference
beam-sensitive specimens
complex metal alloy, IN100
with DTSA II
Hall method
instrumentation requirements
iterative qualitative and quantitative analysis strategy
major constituents
repeated qualitative–quantitative analysis sequences
specimen and standards
specimen homogeneous
stainless steel

L

Landing energy
Lead-acid battery plate reactions
Light-optical analogy, Everhart–Thornley (positive bias) detector
Long-range secondary X-ray fluorescence
Low beam energy SEM
backscattered electron signal characteristics
constituent
extremely low beam energy imaging
high depth resolution SEM
for high lateral resolution SEM
Kanaya–Okayama range
secondary electron
Low beam energy X-ray microanalysis
advantage of
improved spatial resolution
low atomic number elements
reduced matrix absorption correction
challenges and limitations
reduced access to elements
surface layers
vertical heterogeneity, 372–
constitutes
low beam energy analysis range
peak selection strategy

M

Magnification vs. pixel dimension
Manganese nodule
Modeled detectors
aluminum layer
azimuthal angle
crystal thickness
dead layer
detector area
elevation angle
energy scale
gold layer
material editor dialog
Mn Kα, resolution at
nickel layer
number of channels
optimal working distance
panel containing properties
sample-to-detector distance
window type
zero offset
zero strobe discriminator
Monte Carlo calculations
beam electron interaction volume
composition
electron interaction volume
electron trajectory simulation
incident beam energy
Monte Carlo simulation (CASINO simulation)
size of the interaction volume
specimen tilt
Monte Carlo electron trajectory simulation
Monte Carlo simulation
DTSA-II EDS software
X-ray generation

N

National Institutes of Health (NIH)
NIST DTSA II simulation

O

Open Microscopy Environment (OME)
Overscanning

P

Particle absorption effect
Particle analysis
optimum spectra
quantitative analysis of particles
uncertainty in
X-ray measurements
X-ray spectrum imaging (XSI)
Particle mass effect
Particle sample preparation
Plugins

Q

Quantitative compositional mapping

R

Robust light-optical analogy

S

Scanning electron microscope (SEM)
compositional microstructure
crystal structure
dual-beam platforms, combined electron and ion beams
electron-optical parameters
elemental composition
specimen property information
three-dimensional structure
topography
Scanning electron microscope (SEM) image interpretation
compositional microstructure
atomic number contrast, calculation
atomic number contrast with backscattered electrons
BSE atomic number contrast with Everhart–Thornley detector
information in
specimen topography
Everhart–Thornley detector
light-optical analogy
with semiconductor BSE detector
Scanning electron microscope (SEM) images
Rose visibility criterion
signal quality
signal-to-noise ratio
Scanning electron microscope (SEM) imaging checklist
beam current
high resolution imaging
low contrast features
beam energy
compositional contrast with backscattered electrons
high resolution SEM imaging
topographic contrast with backscattered electrons
topographic contrast with secondary electrons
electron detector
backscattered electron detectors
Everhart–Thornley detector
electron signals available
backscattered electrons
beam electron range
secondary electrons (SEs)
image interpretation
annular BSE detector
contrast encoding
direction of illumination
Everhart–Thornley detector
observer’s point of view
semiconductor BSE detector
image presentation
live display adjustments
post-collection processing
specimen considerations
VPSEM
Scanning electron microscope (SEM) instrumentation
detective quantum efficiency (DQE)
detector characteristics
bandwidth
electron detectors, angular measures for
energy response
electron beam parameters
electron detectors
abundance
angular distribution
backscattered electrons
kinetic energy response
electron optical parameters
astigmatism
beam convergence angle, α
beam current
beam current density
beam diameter
beam energy
beam solid angle
electron optical brightness, β
focus
imaging modes
high-current mode
high mode
low-voltage mode
resolution mode
secondary electron detectors
Everhart–Thornley detector
through-the-lens (TTL) electron detectors
specimen current
Scanning electron microscopist and X-ray microanalyst (SEMXM)
Scanning transmission electron microscope (STEM) image
Secondary electron energy spectrum
Secondary electrons (SE)
angular distribution of
energy distribution
escape depth
origin
spatial characteristics of
yield vs. atomic number
yield vs. beam energy
yield vs. specimen tilt
Secondary yields
SEM/EDS
limits of detection for
remote excitation sources
Semiconductors
Shallow surface relief
Silicon drift detector (SDD)
low X-ray flux
moderate resolution
output count rate with live-time dose
resolution and peak position stability
Single pixel measurement
Spatial distribution, backscattered electrons
depth distribution
Monte Carlo simulation
radial distribution
Spectrum imaging (SI)
Stopping powers

T

Thin section analysis
3D viewer plugin tool
Transmission Kikuchi diffraction (TKD)

V

Variable pressure scanning electron microscopy (VPSEM)
contrast in
conventional SEM high vacuum environment
beam integrity
difference from
Everhart–Thornley secondary electron detector
minimizing contamination
stable electron source operation
EDS collimator
elevated pressure microscopy, detectors for
backscattered electrons, passive scintillator detector
secondary electrons, gas amplification detector
favorable sample characteristics
gas scattering effects in
scanning electron microscopy at elevated pressures
focused electron beam
image resolution
specimen charging
water environment of specimen
solve practical problems
unfavorable sample characteristics
X-ray spectrometry

X

X-ray ionization cross sections
X-rays
characteristic of
families
fluorescence yield
intensity
isolated atoms
nomenclature
origin
thick, solid specimens
thin foils
weights of lines
continuum (bremsstrahlung)
absorption
continuum intensity
depth distribution function,Φ(ρz)
electron-excited X-ray spectrum
fluorescence
Monte Carlo simulation
range of
X-ray spectrum imaging (XSI)
compositional mapping
EDS dead-time
elemental mapping data collection
flash mapping
high count mapping
pixel density
pixel dwell time
particle analysis