Table of Contents
Cover
Title
Copyright
Introduction
1. Dissipation Sources in Electronic Circuits
1.1. Brief description of logic types
1.2. Origins of heat dissipation in circuits
2. Thermodynamics and Information Theory
2.1. Recalling the basics: entropy and information
2.2. Presenting Landauer’s principle
2.3. Adiabaticity and reversibility
3. Transistor Models in CMOS Technology
3.1. Reminder on semiconductor properties
3.2. Long- and short-channel static models
3.3. Dynamic transistor models
4. Practical and Theoretical Limits of CMOS Technology
4.1. Speed–dissipation trade-off and limits of CMOS technology
4.2. Sub-threshold regimes
4.3. Practical and theoretical limits in CMOS technology
5. Very Low Consumption at System Level
5.1. The evolution of power management technologies
5.2. Sub-threshold integrated circuits
5.3. Near-threshold circuits
5.4. Chip interconnect and networks
6. Reversible Computing and Quantum Computing
6.1. The basis for reversible computing
6.2. A few elements for synthesizing a function
6.3. Reversible computing and quantum computing
7. Quasi-adiabatic CMOS Circuits
7.1. Adiabatic logic gates in CMOS
7.2. Calculation of dissipation in an adiabatic circuit
7.3. Energy-recovery supplies and their contribution to dissipation
7.4. Adiabatic arithmetic architecture
8. Micro-relay Based Technology
8.1. The physics of micro-relays
8.2. Calculation of dissipation in a micro-relay based circuit
Bibliography
Index
End User License Agreement
List of Illustrations
1. Dissipation Sources in Electronic Circuits
Figure 1.1.
Boolean functions with one variable
Figure 1.2.
Boolean functions with two variables
Figure 1.3.
Example of a three-variable function
Figure 1.4.
Boolean material architecture
Figure 1.5.
Counter, a non-combinational function
Figure 1.6.
Basic systems in sequential logic
Figure 1.7.
The functioning of the traffic lights model
Figure 1.8.
Logical diagram of traffic lights
Figure 1.9.
General diagram customized for the traffic lights model
Figure 1.10.
Sequential synchronous circuit
Figure 1.11.
Latches and flip-flops
Figure 1.12.
Pipelined and non-pipelined architecture types
Figure 1.13.
Sequential pipelined system
Figure 1.14.
Using switches to perform AND and OR functions
Figure 1.15.
The complete AND function
Figure 1.16.
Complementary logic
Figure 1.17.
NMOS and PMOS transistors
Figure 1.18.
NAND using CMOS technology
Figure 1.19.
CMOS circuit and output capacitor
Figure 1.20.
Simplified electric diagram of a CMOS gate
Figure 1.21.
AND gate in pass-transistor technology
Figure 1.22.
Differential pass-transistor logic
Figure 1.23.
Transmission gate
Figure 1.24.
Transmission gate functioning
Figure 1.25.
Exclusive OR in Pass-Gate logic
Figure 1.26.
NAND function in dynamic logic
Figure 1.27.
Dynamic logic gate
Figure 1.28.
A diagram that is not functional
Figure 1.29.
DOMINO logic
Figure 1.30.
Dissipation in a two-port device
Figure 1.31.
RC circuit and heat dissipation
2. Thermodynamics and Information Theory
Figure 2.1.
Microscopic states
Figure 2.2.
System interaction with a thermostat and Boltzmann’s distribution
Figure 2.3.
Irreversible gate
Figure 2.4.
Two-state system
Figure 2.5.
Binary register based on unique atoms or molecules
Figure 2.6.
A factor two compression
Figure 2.7.
The paradox of Maxwell’s demon
Figure 2.8.
Verification of Landauer’s principle
Figure 2.9.
Dissipation in a logically reversible transformation
Figure 2.10.
Interconnect capacitance and “scaling”
Figure 2.11.
Capacitor charge
Figure 2.12.
Optimal and quasi-optimal solutions in a constant capacitance charge
Figure 2.13.
Adiabatic charge of a capacitor when leakage is present
Figure 2.14.
A logic gate with an adiabatic command
Figure 2.15.
The Benett clocking principle
Figure 2.16.
Incomplete pipeline
Figure 2.17.
Operational adiabatic pipeline
Figure 2.18.
Quasi-adiabatic gate
Figure 2.19.
The reversible pipeline
3. Transistor Models in CMOS Technology
Figure 3.1.
Silicon-bands diagram
Figure 3.2.
Filling in the bands and the Fermi level
Figure 3.3.
Bands and the notion of holes
Figure 3.4.
Doped semiconductor
Figure 3.5.
Doped semiconductors
Figure 3.6.
Metal-oxide semiconductor structure
Figure 3.7.
Calculating the inversion charge
Figure 3.8.
The Lilienfield patents
Figure 3.9.
NMOS transistor functioning
Figure 3.10.
Transistor in CMOS technology
Figure 3.11.
Calculating the concentrations in a transistor
Figure 3.12.
Transistor saturation
Figure 3.13.
Characteristic curves of a channel n transistor
Figure 3.14.
Quasi-static transistor model
Figure 3.15.
Small signals transistor model
4. Practical and Theoretical Limits of CMOS Technology
Figure 4.1.
Integrated circuits
Figure 4.2.
Inverter model and layout
Figure 4.3.
Sectional view of the inverter
Figure 4.4.
Interconnect and scaling
Figure 4.5.
Characteristic function of dissipation in CMOS technology
Figure 4.6.
Current in weak inversion
Figure 4.7.
Example of a logic gate
Figure 4.8.
Example of logic gates in a global architecture
Figure 4.9.
Lambert function
Figure 4.10.
Sub-threshold inverter
Figure 4.11.
Estimating the variability of the threshold voltage as a function of the technological node
Figure 4.12.
Planar transistor on an SOI substrate and a FinFET transistor
Figure 4.13.
Theoretical model of a transistor
5. Very Low Consumption at System Level
Figure 5.1.
Parallelism and active power
Figure 5.2.
Parallelization in a data path
Figure 5.3.
Predicting and reducing consumption
Figure 5.4.
Transistor chain and sub-threshold current
Figure 5.5.
MTCMOS architecture
Figure 5.6.
Classic SRAM architecture
Figure 5.7.
Eight-transistor SRAM cell
Figure 5.8.
Constrained optimum
Figure 5.9.
Examples of relative sensitivity depending on the energy (from MAR [MAR 10])
Figure 5.10.
Connections in an integrated circuit
Figure 5.11.
Links between gates
Figure 5.12.
Interconnect with repeaters
Figure 5.13.
Dissipated power in an adapted or unadapted link
6. Reversible Computing and Quantum Computing
Figure 6.1.
Reversible and irreversible gates
Figure 6.2.
Constructing a reversible gate with a width of 2
Figure 6.3.
Control gate
Figure 6.4.
Cascading two control gates
Figure 6.5.
The conventions of reversible logic for a control gate
Figure 6.6.
Control inverter
Figure 6.7.
Toffoli gate
Figure 6.8.
Feynman gate
Figure 6.9.
Fredkin gate
Figure 6.10.
Duplicating a signal and a fan-out
Figure 6.11.
Sylow cascade
Figure 6.12.
The “twiin circuit”
Figure 6.13.
Synthesis of a reversible function
Figure 6.14.
The synthhesis steps
Figure 6.15.
The reversible copy
Figure 6.16.
Controlled inverter boarding an irreversible function
Figure 6.17.
Example of a majority gate
Figure 6.18.
Truth table of a reversible adder
Figure 6.19.
Synthesis of a reversible binary adder
Figure 6.20.
A 4-bit reversible adder
Figure 6.21.
Inverter controlled by a single control bit
Figure 6.22.
Inverter controlled by two inputs
Figure 6.23.
The signals in reversible adiabatic logic
Figure 6.24.
Adiabatic command of a reversible circuit
Figure 6.25.
Quantum adder
7. Quasi-adiabatic CMOS Circuits
Figure 7.1.
Dissipation in a logic gate
Figure 7.2.
Logic pipeline
Figure 7.3.
NAND CMOS gate
Figure 7.4.
Non-adiabatic case
Figure 7.5.
“Bennet clocking”-type architecture
Figure 7.6.
The adiabatic pipeline (example of an AND gate at the input)
Figure 7.7.
CMOS architecture’s incompatibility with the adiabatic principle
Figure 7.8.
ECRL buffer/inverter
Figure 7.9.
Generic ECRL gate
Figure 7.10.
PFAL inverter
Figure 7.11.
General PFAL
Figure 7.12.
The 2N-2N2P (left) inverter and the DCPAL (right) inverter
Figure 7.13.
Comparison of different logic families [BHA 11]
Figure 7.14.
Phase 2 in PFAL
Figure 7.15.
Phase 3 in PFAL
Figure 7.16.
Phase 4 in PFAL
Figure 7.17.
Phase 1 in PFAL for the following event
Figure 7.18.
Energy optimum in adiabatic logic
Figure 7.19.
Sub-threshold adiabatic gate
Figure 7.20.
Role of supplies in energy recovery
Figure 7.21.
Capacitor-based energy recovery supply
Figure 7.22.
Output voltage formation
Figure 7.23.
Optimal number of steps in a capacitor-based generator
Figure 7.24.
Different solutions for energy recovery supplies
Figure 7.25.
Inductive energy recovery supply
Figure 7.26.
2N2P-type generator
Figure 7.27.
Classic logic and adiabatic logic
Figure 7.28.
Four-bit adiabatic adder
Figure 7.29.
Complex exclusive OR gate with N inputs
8. Micro-relay Based Technology
Figure 8.1.
Micro-relay with a suspended membrane (according to [KAM 11])
Figure 8.2.
Characteristic curve of a micro-relay
Figure 8.3.
Dynamic model of a nano-relay
Figure 8.4.
Movement of the mobile structure according to the time [LEU 08]
Figure 8.5.
A device in the plane
Figure 8.6.
NEMIAC project’s particular design
Figure 8.7.
Model for optimizing nano-relays
Figure 8.8.
Micro-relay based adiabatic gate
Figure 8.9.
Circuit without non-adiabatic dissipation
Figure 8.10.
Circuit with non-adiabatic dissipation
Figure 8.11.
OR gate with bistable micro-relays
Figure 8.12.
“Dual-rail” adiabatic gate
Figure 8.13.
Comparison of field-effect transistor-based adiabatic solutions with micro-relay based adiabatic solutions
List of Tables
1. Dissipation Sources in Electronic Circuits
Table 1.1.
Table of transition between states
Table 1.2.
Pipeline functioning
Table 1.3.
Activity factor for the common gates
2. Thermodynamics and Information Theory
Table 2.1.
Energy efficiency of the optimal solution
3. Transistor Models in CMOS Technology
Table 3.1.
Contact potentials for common metals
Table 3.2.
Transistor model parameters
4. Practical and Theoretical Limits of CMOS Technology
Table 4.1.
Static energy and dynamic energy
5. Very Low Consumption at System Level
Table 5.1.
Static current and inputs
6. Reversible Computing and Quantum Computing
Table 6.1.
The truth table
Table 6.2.
The truth table
8. Micro-relay Based Technology
Table 8.1.
The main characteristics of the devices
Guide
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